Defect physics and doping engineering in semiconductor optoelectronic materials

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

This review covers a spectrum of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films, including epilayers and quantum wells. Compensation by doping, implantation, and nonstoichiometric growth are described in terms of the properties of point defects and Fermi level stabilization and pinning. The principal optical and optoelectronic properties ...

Optoelectronic Semiconductor Devices - Principals and Characteristics

Electronic and Optoelectronic Properties of Semiconductor Structures

Defect Doping of InN

InN films grown by molecular beam epitaxy have been subjected to 2 MeV He + irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be us...

: metadiscourse in introduction sections of applied linguistics and physics research articles: exploring variation in frequency and type

abstract in written mode of language, metadiscourse markers are used commonly to help writers in general and academic writers in particular to produce coherent and professional texts. the purpose of the present study was to compare introduction sections of applied linguistics and physics articles regarding their use of interactive and interactional metadiscourse markers based on the model pro...